The CSTBT technology (Carrier Stored Trench Bipolar Transistor) is making its way through the several product  segments of MITSUBISHI. The outstanding low saturation voltage (Vcesat) of the chip family introduced in the year 2002  is now reduced again by the full gate CSTBT technology.

 The new "L1" intelligent power modules (IPM) are using this IGBT chip structure, reducing the typical Vce-sat value in the  datasheet for a 1200 Volt class module to 1,75 Volt only.

 IPMs are adding protection circuits around the IGBT (insulated gate bipolar transistor). The part will automatically turn  off in case of under voltage, short circuit, over-temperature or fault gate signal. Main applications: the L1-series is  intended for motor control, servo and air condition. You can order the parts directly from our stock.

 The L1-series is available in 5 different housings, partly for soldering connections, partly for screw connection. This new  product family covers the range between 25 and 300 Ampères. Voltage classes: 600 and 1200 Volts. You will find all  technical and electrical data  (preliminary data sheet) on our overview page.
 Features: better throughput, on chip temperature sensor on every IGBT, longer life time / enhanced power cycling  capability, increased maximum chopper current in the 7-pack modules, and last but not least:: a slightly lower price  than  the old L-series IPM.

Gehäuse	600V	1200V
	New housing PM50RL1C060	PM25RL1C120
	PM50CL1A060 PM50CL1B060 PM50RL1A060 PM50RL1B060 PM75CL1A060 PM75CL1B060 PM75RL1A060 PM75RL1B060 PM100CL1A060 PM100CL1B060 PM100RL1A060 PM100RL1B060 PM150CL1A060 PM150CL1B060 PM150RL1A060 PM150RL1B060	PM25CL1A120  PM25CL1B120 PM25RL1A120  PM25RL1B120 PM50CL1A120  PM50CL1B120 PM50RL1A120  PM50RL1B120 PM75CL1A120  PM75CL1B120 PM75RL1A120  PM75RL1B120
	PM200CL1A060 PM200RL1A060 PM300CL1A060 PM300RL1A060	PM100CL1A120 PM100RL1A120 PM150CL1A120 PM150RL1A120
	New housing PM50CS1D060 PM75CS1D060 PM100CS1D060 PM150CS1D060 PM200CS1D060	PM25CS1D120 PM50CS1D120 PM75CS1D120 PM100CS1D120