POWEREX Inc. has developed 4 new Silicon Carbide (SiC) modules, which are available from now on:
|part name||description||base plate|
|QID1210005||Si IGBT + SiC Schottky diode||copper|
|QID1210006||Si IGBT + SiC Schottky diode||AlSiC|
|QJD1210010||full SIC: SiC Mosfet + SiC diode||copper|
|QJD1210011||full SIC: SiC Mosfet + SiC diode||AlSiC|
All four new parts integrate two individual switches per module (independend dual type), and allow up to 100A / 1200V maximum load in a 17mm low profile housing.
The QID series parts are split
dual hybrid modules. They include 2 standard IGBTs with a very fast CREE
"Zero Recovery®" free-wheel silicon carbide Schottky diode.
That combination allows fast switching frequencies:
Powerex mentions 30 kHz for hard switching applications, and up to 80 kHz in soft switching applications.
Of course all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Technologically most challenging
are the full silicon carbide SiC MOSFET Modules named QJD1210010
and -11. With these dual 100 Ampere modules Powerex underlines the technological
leadership in the field of high power
SiC transistor modules. QJD1210010 and QJD1210011 represent already the second generation of Powerex SiC product family. Each module consists of two MOSFET Silicon Carbide transistors, with each transistor having a reverse-connected Zero Recovery® free-wheel silicon carbide Schottky diode. The junction temperature of these silicon carbide chips allow 175°C. The parts offer an improved internal inductance (compared to the first siliconcarbide transistors named Powerex QJD1210006 and QJD1210007). The new silicon carbide Mosfets convince with industry leading RDS(on) values, highest speed switching, low capacitance, low drive requirement, and high power density.
All 4 modules allow multiple circuit topologies for the transistors: independent; dual; in parallel; common source and common drain.
Applications: These MOSFET modules
can be used in various high frequency applications, including:
• Energy saving power systems, such as fans, pumps and consumer appliances
• High frequency type power systems, such as UPS, high speed motor drives, induction heating, welding and robotics
• High temperature power systems, such as power electronics in electric vehicle and aviation systems.
Please note that QID1210005,
QID1210006, QJD1210010 and QJD1210011 should be used for engineering evaluation
only. Powerex is presently going through long-term reliability testing of
this modules and therefore will only perform static electrical testing as
shown on our datasheet. Prices of SiC chips are dropping continuously, but
are still high. You should calculate a factor of 50 compared
to standard IGBT modules. Datasheets and prices on request.
*Zero Recovery is a registered trademark of Cree, Inc.
Ineltron is distributor
of MITSUBISHI, Powerex (USA), Isahaya Electronics (Japan), eldre, InPower and Powersem.
We are also selling heat sinks and assembly components of Arcel (France).
INELTRON GmbH, Hugenottenstr.
30, 61381 Friedrichsdorf, Germany
FAX: + 49 6172 75933 phone: + 49 6172 59 88 09 E-Mail: firstname.lastname@example.org
> SiC MOSFETs vers. 2