CM-modules: IGBT
Insulated gate bipolar transistor modules: T-series with Mitsubishi's 7. gen. chips Launched in year 2017, the T-series IGBT modules with Mitsubishi's 7. generation power transistors provides tangible advancements for the user: - 30 % better Rth value (thermal resistance) compared to conventional modules with soldered chips and isolation by aluminium oxyde. - noticeable better internal iInductance compared to all previous series - uncatchable in regards of durability and service life due to perfectly caibrated thermal expansion coefficients of chip, isolation layer and base plate

IGBT-modules: T-series       in standard housing

New design of the base plate: modules with suffix T and T1 in the standard outline use the new developed TMS "Thick Metal Substrate", a special Si3N4 ceramic insulation leading to a Rth 50% less than competition! All transistor and diode chips are sintered, so that the formerly obligatory solder layer under the chip falls apart. By that the endurance against thermal fatige and solder crack raises by factor 10. Also improved were the performance of the transistor and the losses of the free wheeling diodes, so that Mitsubishi shrinked the outlines and the weight of the modules compared to the predecessor series.

three standard housings are available: 

IGBT modules: T-series NX           - NX-housing incl. CIB types (converter-inverter-brake)
For the T-series Mitsubishi has redesigned the NX housing: Instead of soft silicone sealing compound and a plastic cover on top, now the complete area on top of the chips is grouted by a special resin, which is hardening to a massive plate. This lid will hermetically seal the chips and makes the module extremely robust and resistant against torsion. Further advantage: The bond wires on the chips are tied to their initial position. Bond wire lift-off is impossible - the NX-T modules of Mitsubishi are setting a new standard in the field of durability and robustness.

  NX housings

IGBT-Modules NX6-series and NX6.1 series  (S and S1 series is the predecessor of the newer T series)

NX6 sets the standard in 17 mm housing, and with 6th generation IGBT chips inside.

A-series  - standard IGBT-modules
and S-series  - compatible follow up with 6th gen. chips

circuit	Ic (A)
	Vces (V)	75	100			150	200	300	400	600
	1200								CM400HA-24A	CM600HA-24A CM600HB-24A
	1700								CM500HA-34A
	1200		CM100DY-24A			CM150DY-24A	CM200DY-24A	CM300DY-24A CM300DY-24S	CM400DY-24A CM450DY-24S	CM600DY-24A CM600DY-24S
	1700	CM75DY-34A	CM100DY-34A			CM150DY-34A	CM200DY-34A	CM300DY-34A	CM400DY-34A

For general technical information please refer to the application notes.
For technical information about paralleling these modules, Mitsubishi offers the handbook for parallel use of A-Series.

NF-series   - CSTBT - carrier stored trench bipolar transistors

Very good Vce-sat values and reduced costs in comparison to the H-series. As the housings of the NF series are equivalent to the older H-series, those newer modules can be used as a drop in exchange type. We recommend to switch to the NF-series when you are using the standard-modules of the H-series yet.

For general technical information please refer to the application notes.

NFH-series (for high frequency applications)

Normal power IGBT modules will not work properly with frequencies higher than 30.000 Hz. The NFH-series is your link to frequencies up to 60.000 Hz.

For the NFH-series only dual-modules are available.

IGBT Modules (U-series)

 lower internal inductivity than the H-series, changed characteristics of freewheeling diode, reduced costs

Circuit		Vces (V)	Ic (A)
Type	Diagram		50	75	100	150	200	300	400	600	800
H		600								CM600HU-12H
		1200							CM400HU-24H	CM600HU-24H
E3		600		CM75E3U-12H	CM100E3U-12H	CM150E3U-12H	CM200E3U-12H	CM300E3U-12H
		1200	CM50E3U-24H	CM75E3U-24H	CM100E3U-24H	CM150E3U-24H	CM200E3U-24H	CM300E3U-24H
D		600		CM75DU-12H	CM100DU-12H	CM150DU-12H	CM200DU-12H	CM300DU-12H	CM400DU-12H		CM800DU-12H
		1200	CM50DU-24H	CM75DU-24H	CM100DU-24H	CM150DU-24H	CM200DU-24H	CM300DU-24H	CM400DU-24H
		1700			CM100DU-34KA	CM150DU-34KA	CM200DU-34KA	CM300DU-34KA	CM400DU-34KA
B		600		CM75BU-12H	CM100BU-12H
		1200	CM50BU-24H
T		600		CM75TU-12H	CM100TU-12H	CM150TU-12H	CM200TU-12H
		1200	CM50TU-24H	CM75TU-24H	CM100TU-24H
		1700	CM50TU-34KA	CM75TU-34KA

 E3 series for brake systems.
 KA series with local life time control ICs and an isolation class of 3500V AC.

 IGBT Modules (F-series)

 The trench gate IGBT structure decreases power losses and inductivity

Circuit		Vces (V)	Ic (A)
Type	Diagram		50	75	100	150	200	300	400	600
H		250							CM450HA-5F	CM600HA-5F CM600HN-5F
		600								CM600HU-12F
		1200							CM400HU-24F	CM600HU-24F
E3		600			CM100E3U-12F
		1200		CM75E3U-24F	CM100E3U-24F	CM150E3U-24F	CM200E3U-24F	CM300E3U-24H
D		250						CM350DU-5F	CM400DU-5F	CM600DU-5F
		600		CM75DU-12F	CM100DU-12F	CM150DU-12F	CM200DU-12F	CM300DU-12F	CM400DU-12F
		1200	CM50DU-24F	CM75DU-24F	CM100DU-24F	CM150DU-24F	CM200DU-24F	CM300DU-24F	CM400DU-24F	CM600DU-24F
T		250					CM200TU-5F
		600		CM75TU-12F	CM100TU-12F CM100TJ-12F	CM150TU-12F CM150TJ-12F	CM200TU-12F
		1200	CM50TU-24F CM50TJ-24F	CM75TU-24F CM75TJ-24F	CM100TU-24F CM100TJ-24F

 

High voltage IGBTs

Datasheet missing? Please send your request by email - we will try to send the datasheet in return.

IGBT Modules (H-series) - out of production

H-series was for long time setting the standards for IGBT (insulated gate bipolar transistor) applications.
These 3. generation IGBT parts are still available, but for new designs we suggest to switch to NF or NX6 series.

Circuit

Vces  (V)

Ic (A)

Type

Diagram

15

20

30

50

75

100

150

200

300

400

600

800

1000

1200

H

600

CM200HA-12H

CM300HA-12H

CM400HA-12H

CM600HA-12H

1200

CM200HA-24H

CM300HA-24H

CM400HA-24H

CM600HA-24H

CM800HA-24H

CM1000HA-24H

CM1200HA-24H

1400

CM300HA-28H

CM400HA-28H

D

600

CM50DY-12H

CM75DY-12H

CM100DY-12H

CM150DY-12H

CM200DY-12H

CM300DY-12H

CM400DY-12H

1200

CM50DY-24H

CM75DY-24H

CM100DY-24H

CM150DY-24H

CM200DY-24H

CM300DY-24H

1400

CM50DY-28H

CM75DY-28H

CM100DY-28H

CM150DY-28H

CM200DY-28H

CM300DY-28H

T

600

CM15TF-12H

CM20TF-12H

CM30TF-12H

CM50TF-12H

CM75TF-12H

CM100TF-12H

CM150TF-12H

1200

CM15TF-24H

CM20TF-24H

CM30TF-24H

CM50TF-24H

CM75TF-24H

CM100TF-24H

1400

CM50TF-28H

CM75TF-28H

CM100TF-28H

(MDx-series) - out of production

 CIB modules  with integrated inverter, converter & brake for AC/DC-motor and server control applications (type MD).
 CI modules come without brake (types MD1 & MD3).

Circuit		Vces (V)	Ic (A)
Type	Diagram		10	15	20	25 / 30	50
MD		600	CM10MD-12H	CM15MD-12H	CM20MD-12H	CM30MD-12H	CM50MD-12H
		1200	CM10MD-24H	CM15MD-24H		CM25MD-24H
MD1		600	CM10MD1-12H	CM15MD1-12H	CM20MD1-12H	CM30MD1-12H
MD3		600	CM10MD3-12H	CM15MD3-12H	CM20MD3-12H	CM30MD3-12H

In the beginning of year 2018 Mitsubishihas launched the G1 series in Europe. All modules shrinked in size compared to the previous L1/S1 series, which will still be produced parallelly. The pin layout and the dimension of the connector plug strip was not changed and is fully compatible to Mitsubishi's previous L and L1   IPMs.
Newly released were the straight terminal versions. All former IPMs were L-shaped; that means that the the power terminals for N and P were placed on the small side of the module. For customers who want only access to one (the longer side) of the module the new straight pin layout may be helpful.
Here is a short overview what versions are available and what letter stands for which feature in the type name. ("APL" for example stands for the smallest availble A housing, "P" for solder pins on the power termonals side, and "L" for traditional L-shaped layout.)

L1-series  - the previous IPM series

With installing of full gate CSTBT-chips, Mitsubishi lowered the voltage drop of the 1200 volt modules once again. The typical Vce-sat voltage lowers to 1,75 Volts. Additional Mitsubishi offeres two new housing types (CS1D and RL1C).
Price of L1-series modules are slightly lower than of L-series. We recommend to our customers to change to that new type, which should be easily realizable..

L-series   - first IPM series with CSTBT-technology chips

The L-series implements Carrier Stored Trench Bipolar Transistor chips, granting very low Vce-sat-values (typical 1,5 V for 600V and 1,9 V for 1200V). On-chip temperature sensor for all CSTBT-chips, reduced package sizes and more powerful chopper diode for higher brake current.
In 2008 Mitsubishi introduced the follow up product family named L1-series with once more lower Vce-sat value. The new L1 series is normally usable as a drop in replacment of the older L-series.

*CLB/RLB-types come with solder pins, CLA/RLA-types with screw connections for the DC and AC-terminals.

For further information please download here the L series application handbook.

V1-series  IPM  - for power applications > 400 Amperes

Mitubishi's new V1 series Intelligent power modules combine the IGBts in dual configuration allowing the engineer to build up either 4 pulse or 6 pulse bridges. The connectors for the control pins are compatible to older 2in1 IPMs.
Grace to the monolithic integrated temperature sensor right on the IGBT chip, the V1 series provides a very precise over temperature switch off. This technology is far superior compared to other manufacturers protecting their modules only with a NTC on the base plate.

Further information: Mitsubishi V1-series presentation (.pdf)

Solar  IPM  - out of production

Mitsubishi offers special photovoltaic modules with 50 and 75 A power rating. Available are three different housings (A, B and C). Functionally the PV series offers versions with inverter only (B4), chopper + inverter (B5) and a module with inverter and 2 choppers (B6).

Solar IPMs at a glance:
'A' housing with screw terminals, 'B'-housing with soldering pins, 'C'-housing with small footprint.
Due to the lower losses of L1 chips the C version PV modules can use the small housing which was tried and approved already in the L1 standard IPM series under the name "S1 housing".

Further information: application notes for PV (photovoltaic)-IPMs

Using 4th generation planar IGBT chip structure and 1ym design. Not for new designs. We suggest to use the newer L-series instead.

Ultra compact transfer mold packages include driver and protection ICs.

The third generation comes with CSTBT chip technologie and 0,6 ym planar chips. Using the same housings than the 2nd generation, the better Vce-sat performance allows modules with higher currents.

* the S-types come with open emitter for applications using vector control
Suffixes:
"-P" = conform to RoHS-konform        "-A" = longer pins

DIP-IPM   -  "3.5"th generation

DIP-IPM   -  4th generation

The size reduction of the CSTBT-chips allows more power with less silicium surface - as long as the cooling keeps pace with the needed power dissipation. So in the 4th generation Mitsubishi concentrated on optimizing the dual inline package IPMs towards significantly better thermal resistance (Rth j-c), realized by a layer of resin. That setup allows much smaller housings of the modules and as a side effect also a better isolation: 600 V-Mini-DIPs have now a Viso of either 1500 V or 2500 V, depending of the housing type. Datasheets on request.

* V4-DIP-modules are available with the following options:

** modules PS21993-x, PS21994-x und PS21997-x with lower loss full-gate CSTBT-chips.

DIP-IPM   -  5th generation Mitsubishi implemented in their 5th generation of dual inline package intelligent power modules consequently the new CSTBT chips into the market proven "Super Mini DIP" housing. The 5th generation DIP-IPMs focus on small power drives like in air conditioners, washing machines and other white goods.

Features:
• 3-phase DC/AC conversion
• Junction temp. range Tj: -20C° up to 150C°
• Protection functions: Short Circuit (SC), Under Voltage (UV), Over Temperature (OT)
• Analogue output of LVIC temp. or integrated over temp. protection
• Fault signal output in case of a failure
• 3-15V input compatible high active logic
• available as short-, long- or zigzag pin type
• pin compatible with V4  PS219xx series (38mm x 24mm)
• N-side open emitter
• Isolation voltage: 1500Vrms

FM-Module: Hochleistungs-MOSFETs

Circuit

VCBO (V)

Ic (A)

Type

Diagram

15

20

30

50

75

100

150

200

300

400

500

600

H

600

QM15HA-H

QM30HA-H

QM50HA-H

QM75HA-H

QM100HY-H

QM150HY-H

QM200HA-H

QM300HA-H

note1 QM400HA-H

note1 QM500HA-H High-hFE

note1 1000

QM30HY-2H

QM50HY-2H

QM100HY-2H

QM150HY-2H

QM200HA-2H

QM300HA-2H

QM400HA-2H

QM600HA-2H

note1 1200

QM200HA-24

QM300HA-24

QM400HA-24

QM600HA-24

1400

QM30HC-2H (non isolated)

D

600

QM15DX-H

QM20DX-H

QM30DY-H

QM50DY-H

QM75DY-H

QM100DY-H

QM150DY-H

QM200DY-H

note1 1000

QM15DX-2H

QM30DY-2H

QM50DY-2H

QM75DY-2H

QM100DY-2H

QM150DY-2H

QM200DY-2H

QM300DY-2H

note1 1200

QM15DX-24

QM30DY-24

QM50DY-24

QM75DY-24

QM100DY-24

QM150DY-24

QM200DY-24

QM300DY-24

E2

600

QM30E2Y-H

note1 1000

QM30E2Y-2H

QM50E2Y-2H

QM75E2Y-2H

E3

600

QM30E3Y-H

QM50E3Y-H

QM75E3Y-H

note1 1000

QM30E3Y-2H

QM50E3Y-2H

QM75E3Y-2H

QM100E3Y-2H

C

600

QM30CY-H

QM50CY-H

QM75CY-H

QM100CY-H

QM150CY-H

T

600

QM15TD-H

QM20TD-H

QM30TX-H QM30TB-H

QM50TX-H

QM75TX-H

QM100TX1-H

note1 1000

QM15TB-2H

QM30TB-2H

QM50TB-2H

note1 1200

QM15TB-24

QM30TB-24

QM50TB-24

note1: triple darlington type

general info: a "k" at the end of type number has no influence on electrical or mechanical matters

 

High Beta Transistor Modules

Circuit		VCBO (V)	Ic (A)
Type	Diagram		10	30	50	300	400	600	800	1000
H		600	QM10HA-HB	note2 QM30HA-HB	note2 QM50HA-HB	note2 QM300HA-HB	note2 QM400HA-HB
							note2 QM500HA-H
		note3 1000				QM300HA-2HB	QM400HA-2HB	QM600HA-2HB	QM800HA-2HB	QM1000HA-2HB
		note3 1200				QM300HA-24B	QM400HA-24B	QM600HA-24B	QM800HA-24B	QM1000HA-24B

			15	20	30	50	75	100	150	200	300
D		note2 600			QM30DY-HB	QM50DY-HB	QM75DY-HB	QM100DY-HB	QM150DY-HBK	QM200DY-HB	QM300DY-HB
		note3 1000				QM50DY-2HB	QM75DY-2HB	QM100DY-2HB	QM150DY-2HBK	QM200DY-2HB	QM300DY-2HB
		note3 1200				QM50DY-24B	QM75DY-24B	QM100DY-24B	QM150DY-24BK	QM200DY-24B	QM300DY-24B
T		500	QM15TG-9B	QM20TG-9B
		600	QM15TD-HB	QM20TD-HB	note2 QM30TF-HB	note2 QM50TF-HB	note2 QM75TF-HB	note2 QM100TF-HB
			note4 QM15KD-HB	note4 QM20KD-HB	note2 QM30TX-HB	note2 QM50TX-HB	note2 QM75TX-HB	note2 QM100TX1-HB
		1000	note2 QM15TB-2HB		note3 QM30TB-2HB	note3 QM50TB-2HB
		1200	note2 QM15TB-24B		note3 QM30TB-24B	note3 QM50TB-24B

note1: Ic=500A note3: fourfold stacked darlington type

note2: triple stacked darlington type note4: 3-phase built-in converter general info: a "K" at the end of type number has no influence on electrical or mechanical matters

 

RM-modules: diode module

Standard Diodes

Circuit		VRRM (V)	I Fav (A)
Type	Diagram		20	30	40	50	60	100	150	250	500
H		400									RM500HA-M
		800									RM500HA-H
		1200									RM500HA-24
		1600									RM500HA-2H
D		400		RM30DZ-M			RM60DZ-M	RM100DZ-M	RM150DZ-M	RM250DZ-M	RM500DZ-M
		800		RM30DZ-H			RM60DZ-H	RM100DZ-H	RM150DZ-H	RM250DZ-H	RM500DZ-H
		1200		RM30DZ-24			RM60DZ-24	RM100DZ-24	RM150DZ-24	RM250DZ-24	RM500DZ-24
		1600		RM30DZ-2H			RM60DZ-2H	RM100DZ-2H	RM150DZ-2H	RM250DZ-2H	RM500DZ-2H
C		400		RM30CZ-M			RM60CZ-M	RM100CZ-M	RM150CZ-M	RM250CZ-M
		800		RM30CZ-H			RM60CZ-H	RM100CZ-H	RM150CZ-H	RM250CZ-H
		1200		RM30CZ-24			RM60CZ-24	RM100CZ-24	RM150CZ-24	RM250CZ-24
		1600		RM30CZ-2H			RM60CZ-2H	RM100CZ-2H	RM150CZ-2H	RM250CZ-2H
U		400							RM150UZ-M	RM250UZ-M	RM500UZ-M
		800							RM150UZ-H	RM250UZ-H	RM500UZ-H
		1200							RM150UZ-24	RM250UZ-24	RM500UZ-24
		1600							RM150UZ-2H	RM250UZ-2H	RM500UZ-2H
D2		2000				RM50D2Z-40		RM100D2Z-40
T		400	RM10TA-M	RM15TA-M	RM20TPM-M		RM30TA-M RM30TB-M RM30TPM-M	RM50TC-M	RM75TC-M RM75TPM-M
		800	RM10TA-H	RM15TA-H	RM20TPM-H		RM30TA-H RM30TB-H RM30TPM-H	RM50TC-H	RM75TC-H RM75TPM-H
		1200	RM10TA-24	RM15TA-24	RM20TA-24 RM20TPM-24		RM30TC-24	RM50TC-24	RM75TC-24 RM75TPM-24
		1600	RM10TA-2H	RM15TA-2H	RM20TA-2H RM20TPM-2H		RM30TC-2H	RM50TC-2H	RM75TC-2H RM75TPM-2H
		2000		RM15TC-40			RM30TC-40