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CM-modules: IGBT

classification jump to IPMsjump to application specific power modulesjump to bipolar sectionjump to diode modules
 
IGBT-Modules NX6-series and NX6.1 series
NX6 sets the new standard in 17 mm housing, and with 6th generation IGBT chips inside.

circuit
Vces(V)
35 - 50 A
75 -100 A
150 - 200 A
300 A
400 / 450 A
600 A
CIB
converter-inverter+ brake
1200 V
7in1
1200 V
1700 V
planned
   
6in1
1200 V
1700 V
planned
   
2in1
1200 V
1700 V
 

CM450DX-34SA

CM450DXL-34SA

brake / chopper
1200 V
     
1700 V
     

 

A-series  - standard IGBT-modules
and S-series  - compatible follow up with 6th gen. chips

circuit
Ic (A)
Vces
(V)
75 100 150 200 300 400 600
1200   CM400HA-24A CM600HA-24A
CM600HB-24A
1700

CM500HA-34A

1200   CM100DY-24A CM150DY-24A CM200DY-24A

CM300DY-24A

CM300DY-24S

CM400DY-24A

CM450DY-24S

CM600DY-24A

CM600DY-24S

1700

CM75DY-34A

CM100DY-34A

CM150DY-34A

CM200DY-34A

CM300DY-34A

CM400DY-34A

 

For general technical information please refer to the application notes.
For technical information about paralleling these modules, Mitsubishi offers the handbook for parallel use of A-Series.

 

NF-series   - CSTBT - carrier stored trench bipolar transistors

Very good Vce-sat values and reduced costs in comparison to the H-series. As the housings of the NF series are equivalent to the older H-series, those newer modules can be used as a drop in exchange type. We recommend to switch to the NF-series when you are using the standard-modules of the H-series yet.

Circuit
Vces
(V)
Ic (A)
Type Diagram 50 75 100 150 200 300 400 600 900 and up
D

600   CM150DY-12NF CM200DY-12NF CM300DY-12NF CM400DY-12NF CM600DY-12NF  
1200   CM75DY-24NF CM100DY-24NF CM150DY-24NF CM200DY-24NF CM300DY-24NF CM400DY-24NF

CM600DU-24NF

CM800DY-24S

CM900DU-24NF

CM1400DU-24NF
T

600 CM75TL-12NF CM100TL-12NF CM150TL-12NF CM200TL-12NF    
1200 CM50TL-24NF CM75TL-24NF CM100TL-24NF CM150TL-24NF CM200TL-24NF CM300TJ-24NF CM450TJ-24NF    
R

600 CM75RL-12NF CM100RL-12NF CM150RL-12NF CM200RL-12NF    
1200 CM50RL-24NF CM75RL-24NF CM100RL-24NF CM150RL-24NF CM200RL-24NF    

For general technical information please refer to the application notes.


NFH-series (CSTBT technology for high frequency applications)

Normal power IGBT modules will not work properly with frequencies higher than 30.000 Hz. The NFH-series is your link to frequencies up to 60.000 Hz.

Vces
(V)
Ic (A)
100 150 200 300 400 600
600 CM100DUS-12F CM150DUS-12F CM200DU-12NFH CM300DU-12NFH CM400DU-12NFH
1200 CM100DU-24NFH CM150DU-24NFH CM200DU-24NFH CM300DU-24NFH CM400DU-24NFH CM600DU-24NFH

For the NFH-series only dual-modules are available.

 

IGBT Modules (U-series)

 lower internal inductivity than the H-series, changed characteristics of freewheeling diode, reduced costs

Circuit
Vces
(V)
Ic (A)
Type Diagram 50 75 100 150 200 300 400 600 800
H

600               CM600HU-12H  
1200             CM400HU-24H CM600HU-24H  
E3

600   CM75E3U-12H CM100E3U-12H CM150E3U-12H CM200E3U-12H CM300E3U-12H      
1200 CM50E3U-24H CM75E3U-24H CM100E3U-24H CM150E3U-24H CM200E3U-24H CM300E3U-24H      
D

600   CM75DU-12H CM100DU-12H CM150DU-12H CM200DU-12H CM300DU-12H CM400DU-12H   CM800DU-12H
1200 CM50DU-24H CM75DU-24H CM100DU-24H CM150DU-24H CM200DU-24H CM300DU-24H CM400DU-24H    
1700     CM100DU-34KA CM150DU-34KA CM200DU-34KA CM300DU-34KA CM400DU-34KA    
B 600   CM75BU-12H CM100BU-12H            
1200 CM50BU-24H    
T 600   CM75TU-12H CM100TU-12H CM150TU-12H CM200TU-12H        
1200 CM50TU-24H CM75TU-24H CM100TU-24H            
1700 CM50TU-34KA CM75TU-34KA              

 E3 series for brake systems.
 KA series with local life time control ICs and an isolation class of 3500V AC.

 

 IGBT Modules (F-series)

 The trench gate IGBT structure decreases power losses and inductivity

Circuit
Vces
(V)
Ic (A)
Type Diagram 50 75 100 150 200 300 400 600
H

250
            CM450HA-5F CM600HA-5F

CM600HN-5F
600
CM600HU-12F
1200
CM400HU-24F CM600HU-24F
E3

600
    CM100E3U-12F          
1200
  CM75E3U-24F CM100E3U-24F CM150E3U-24F CM200E3U-24F CM300E3U-24H    
D

250
          CM350DU-5F CM400DU-5F CM600DU-5F
600

CM75DU-12F

CM100DU-12F

CM150DU-12F

CM200DU-12F

CM300DU-12F

CM400DU-12F

1200
CM50DU-24F

CM75DU-24F

CM100DU-24F

CM150DU-24F

CM200DU-24F

CM300DU-24F

CM400DU-24F

CM600DU-24F
T
250
        CM200TU-5F      
600
CM75TU-12F

CM100TU-12F
CM100TJ-12F

CM150TU-12F
CM150TJ-12F

CM200TU-12F
1200
CM50TU-24F
CM50TJ-24F
CM75TU-24F
CM75TJ-24F
CM100TU-24F
CM100TJ-24F

 

High voltage IGBTs

Vces
(V)
Ic (A)
200/400 600 800/900 1000 1200 1500 - 1800
2400
1700
CM400HA-34H

CM600DY-34H

CM600E2Y-34H

CM800HA-34H

CM800DZ-34H

CM1000DU-34NF

CM1000DUC-34NF

CM1000DUC-34SA

CM1200HA-34H

CM1200HC-34H

CM1200HCB-34N

CM1200DB-34N

CM1200DC-34N

CM1200E4C-34N

CM1600HC-34H


CM1800HC-34H

CM1800HC-34N

CM1800HCB-34N

CM1800HD-34H

CM2400HC-34H

CM2400HC-34N

CM2400HCB-34N

2500
CM400DY-50H

CM800HA-50H

CM800HB-50H

CM1200HA-50H

CM1200HB-50H

CM1200HC-50H

3300

CM400DY-66H

CM400HG-66H

CM800HA-66H
CM800HB-66H
CM800HC-66H

CM800E2C-66H
CM800E4C-66H
CM800E6C-66H

CM800E2Z-66H

CM1200HA-66H

CM1200HB-66H

CM1200HC-66H

CM1200HG-66H

CM1500HC-66R  
4500

CM200HB-90H

CM400HB-90H

CM600HB-90H

CM900HB-90H

     
6500

CM200HG-130H

CM600HG-130H

 

 

Datasheet missing? Please send your request by email - we will try to send the datasheet in return.


IGBT Modules (H-series) - not recommended for new designs

H-series was for long time setting the standards for IGBT (insulated gate bipolar transistor) applications.
These 3. generation IGBT parts are still available, but for new designs we suggest to switch to NF or NX6 series.

Circuit Vces  (V)

Ic (A)

Type

Diagram

15 20 30 50 75 100 150 200 300 400 600 800 1000 1200
H

600

              CM200HA-12H CM300HA-12H CM400HA-12H CM600HA-12H      
1200               CM200HA-24H CM300HA-24H CM400HA-24H CM600HA-24H CM800HA-24H CM1000HA-24H CM1200HA-24H
1400                 CM300HA-28H CM400HA-28H      
D 600       CM50DY-12H CM75DY-12H CM100DY-12H CM150DY-12H CM200DY-12H CM300DY-12H CM400DY-12H        
1200       CM50DY-24H CM75DY-24H CM100DY-24H CM150DY-24H CM200DY-24H CM300DY-24H          
1400       CM50DY-28H CM75DY-28H CM100DY-28H CM150DY-28H CM200DY-28H CM300DY-28H          
T 600 CM15TF-12H CM20TF-12H CM30TF-12H CM50TF-12H CM75TF-12H CM100TF-12H CM150TF-12H               
1200 CM15TF-24H CM20TF-24H CM30TF-24H CM50TF-24H CM75TF-24H CM100TF-24H                
1400       CM50TF-28H CM75TF-28H CM100TF-28H                 

 IGBT Modules (MDx-series) - out of production

 CIB modules  with integrated inverter, converter & brake for AC/DC-motor and server control applications (type MD).
 CI modules come without brake (types MD1 & MD3).

Circuit Vces
(V)
Ic (A)
Type Diagram 10 15 20 25 / 30 50
MD 600 CM10MD-12H CM15MD-12H CM20MD-12H CM30MD-12H CM50MD-12H
1200 CM10MD-24H CM15MD-24H   CM25MD-24H  
MD1 600 CM10MD1-12H CM15MD1-12H CM20MD1-12H CM30MD1-12H  
MD3 600 CM10MD3-12H CM15MD3-12H CM20MD3-12H CM30MD3-12H  

 

PM-modules: "(Intelligent) Power Modules"

IGBT modules designed with built-in control circuits and protection against short circuit, over current, over temperature and under voltage.

L1-series  - the most recent Intelligent Power Module (IPM) series

With installing of full gate CSTBT-chips, Mitsubishi lowered the voltage drop of the 1200 volt modules once again. The typical Vce-sat voltage lowers to 1,75 Volts. Additional Mitsubishi offeres two new housing types (CS1D and RL1C).
Price of L1-series modules are slightly lower than of L-series. We recommend to our customers to change to that new type, which should be easily realizable.
.

Circuit

Vces
(V)

Ic(A)

Type
function
25
50
75
100
150
200
300
C

C configuration

600
 
1200
 
 
R

R configuration

600
  PM200RL1A060
1200
  
 
 


L-series   - first IPM series with CSTBT-technology chips

The L-series implements Carrier Stored Trench Bipolar Transistor chips, granting very low Vce-sat-values (typical 1,5 V for 600V and 1,9 V for 1200V). On-chip temperature sensor for all CSTBT-chips, reduced package sizes and more powerful chopper diode for higher brake current.
In 2008 Mitsubishi introduced the follow up product family named L1-series with once more lower Vce-sat value. The new L1 series is normally usable as a drop in replacment of the older L-series.

Circuit

Vces
(V)

Ic(A)

Type
function
25
50
75
100
150
200
300
C

600
 
1200
R

600
  PM200RLA060 PM300RLA060
1200
 
 


*CLB/RLB-types come with solder pins, CLA/RLA-types with screw connections for the DC and AC-terminals.

For further information please download here the L series application handbook.


V1-series  IPM  - for power applications > 400 Amperes

Mitubishi's new V1 series Intelligent power modules combine the IGBts in dual configuration allowing the engineer to build up either 4 pulse or 6 pulse bridges. The connectors for the control pins are compatible to older 2in1 IPMs.
Grace to the monolithic integrated temperature sensor right on the IGBT chip, the V1 series provides a very precise over temperature switch off. This technology is far superior compared to other manufacturers protecting their modules only with a NTC on the base plate.

Vces
(V)
Ic (A)
200 300 400 600 800
600     PM400DV1A060 PM600DV1A060 PM800DV1B060
1200 PM200DV1A120 PM300DV1A120 PM450DV1A120 PM600DV1B120  

Further information: Mitsubishi V1-series presentation (.pdf)

 

Solar  IPM  - specialized in photovoltaic applications

Mitsubishi offers special photovoltaic modules with 50 and 75 A power rating. Available are three different housings (A, B and C). Functionally the PV series offers versions with inverter only (B4), chopper + inverter (B5) and a module with inverter and 2 choppers (B6).

inverter
inverter + chopper
inverter + 2 chopper
50 A
75 A


Solar IPMs at a glance:
'A' housing with screw terminals, 'B'-housing with soldering pins, 'C'-housing with small footprint.
Due to the lower losses of L1 chips the C version PV modules can use the small housing which was tried and approved already in the L1 standard IPM series under the name "S1 housing".

Further information: application notes for PV (photovoltaic)-IPMs


S-(old standard) series - Not for new designs.

New standard series is L (and L1) series.

Circuit

Vces
(V)

Ic(A)

Type function
10
15
20
30 / 25
50
75
100
150
200
300
400
600
800
H

600
1200
 
 
 
 
 
 
 
 
 
D

600
 
 
 
 
 
 
 
 
 
1200
 
 
 
 
 
 
 
 
C

600

PM10CSJ060

PM15CSJ060

PM20CSJ060

PM30CSJ060

 
 
 
 
 
 
1200
 
 
 
 
 
 
 
 
 
R

600
 
 
 
 
 
 
 
 
1200
 
 
 
 
 
 
 
 
 

 

V-series  - not recommended for new designs

Lower internal inductance than S-series, modified characteristics of free wheeling diode, partly reduced costs.
Like S-series also the V-series is not recommended for new designs.
.

Circuit

Vces
(V)

Ic(A)

Type
function
50
75
100
150
200
300
400
600
D

600
 
 
 
 
 
 
1200
 
 
 
 
 
 
C

600
 
 
 
 
1200
 
 
 
 
 
R

600
 
 
 
 
 
 
 
1200
 
 
 
 
 
 
 

 

S-dash-series  - not recommended for new designs

Using 4th generation planar IGBT chip structure and 1ym design. Not for new designs. We suggest to use the newer L-series instead.

Circuit

Vces
(V)

Ic(A)

Type
function
50
75
100
150
200
300
C

600
PM50CSD060
PM50CSE060
(PM50CBS060) 
PM75CSD060
PM75CSE060
(PM75CBS060)
PM150CSD060
PM150CSE060
(PM150CBS060)
PM200CSD060
PM200CSE060
(PM200CBS060)
PM300CSD060
PM300CSE060
(PM300CBS060)
1200
   
R

600
PM200RSD060
PM200RSE060
PM300RSD060
PM300RSE060
1200
 
 


*The CBS-types come with temperature sensors on every single chip. They will be only available on demand.
Difference between SD and SE: CSD/RSD modules keep the layout and position of the terminals from the s-series, whereas CSE/RSE modules come with optimized terminals (16 pins instead of 19).



PS-modules: application specific

link to MITSUBISHI explanation page

 

Application specific intelligent power modules (AS-IPM)

600 Volt types
circuits
output current
1200 Volt types
100 % load
150 % load
100 % load
150 % load
PS11011

600 V

brake circuit
integral converter
current sensing
IGBTs with driver & protection

0,8
1,2
PS12012-A

1200 V

brake circuit
integral converter
current sensing
IGBTs with driver & protection

1,0
1,5
PS11012
1,5
2,25
PS12013-A
1,6
2,4
PS11013
3,0
4,5

PS12014-A

2,6
3,9

PS11014

5,0
7,5
PS12015-A
4,0
6,0
PS11015
7,0
10,5
 
PS11016
11,0
16,5
PS12017-A
7,2
10,8
PS11017
17,0
25,5
PS12018-A
9,2
13,8
             
PS11021-A

600 V

current sensing
IGBTs with driver & protection

0,8
1,2
       
PS11022-A
1,5
2,25
       
PS11023-A
3,0
4,5
       
PS11024-A
5,0
7,5
       
PS11025-A
7,0
10,5
       
             
PS11032

600 V

integral converter
current sensing
IGBTs with driver & protection

1,5
2,25

1200 V

integral converter
current sensing
IGBTs with driver & protection

1,2
1,8
PS11033
3,0
4,5
1,8
2,7
PS11034
5,0
7,5
3,4
5,1
PS11035
7,0
10,5
PS11036
11,0
16,5
5,5
8,3
PS11037
17,0
25,5
9,2
13,8

 

Dual inline Package intelligent power modules (DIP-IPM)   -    2nd generation

Ultra compact transfer mold packages include driver and protection ICs.

application
isolation voltage class
types
normal DIP-IPM
1500 V
PS21244-E  PS21254-E  PS21245-E  PS21255-E   PS21246-E
2500 V
PS21444-E  PS21454-E  PS21445-E  PS21455-E   PS21446-E
miniature DIP-IPM
1500 V
PS20341-G  PS20351-G  PS21342-G  PS21352-G  PS21343-G  PS21353-G   "G" = first edition. "N" - types come with reduced noise level (2nd edition).
2500 V
PS21542-G  PS21552-G  PS21543-G  PS21553-G   (also "N"-types available)


DIP-IPM   -  3rd generation

The third generation comes with CSTBT chip technologie and 0,6 ym planar chips. Using the same housings than the 2nd generation, the better Vce-sat performance allows modules with higher currents.

 
Vces (V)
motor rating (typical)
100 W
200 W
400 W
750 W
1,5 kW
2,2 kW
3,7 kW
DIP (1200 V isolation)
600
DIP (2500 V isolation)
1200
MINI-DIP
600
SIP
600

* the S-types come with open emitter for applications using vector control
Suffixes:
"-P" = conform to RoHS-konform        "-A" = longer pins

 

DIP-IPM   -  "3.5"th generation

 
Vces (V)
motor rating (typical)
1,5 kW
2,2 kW
3,7 kW
DIP (V3.5)
[Viso = 2500 V]
600
DIP (V3.5) open emitter
[Viso = 2500 V]
1200



DIP-IPM   -  4th generation

The size reduction of the CSTBT-chips allows more power with less silicium surface - as long as the cooling keeps pace with the needed power dissipation. So in the 4th generation Mitsubishi concentrated on optimizing the dual inline package IPMs towards significantly better thermal resistance (Rth j-c), realized by a layer of resin. That setup allows much smaller housings of the modules and as a side effect also a better isolation: 600 V-Mini-DIPs have now a Viso of either 1500 V or 2500 V, depending of the housing type. Datasheets on request.

 
Vces
(V)
motor rating (typical)
100 W
(3 A)
200 W
(5 A)
300 W
(8 A)
400 W
(10 A)
750 W
(15 A)
1,5 kW
(20 A)
2,2 kW
(>=30 A)
Super Mini DIP
[Viso = 1500 V]
600
PS21964-T /-ST
PS21994-4
(-4A -4C -4W)
PS21965-T /-ST
PS21965-4
( -4A -4C -4W)
Super Mini DIP
with Boot Strap Diode (BSD)
600
PS219A2
PS219A2-T
PS219A3-E
PS219A3-ET
PS219A3
PS219A3-T
PS219A4
PS219A4-T
Mini DIP (V4)
[Viso = 2500 V]
600
     
Large DIP (V4)
[Viso = 2500 V]
600
     
4 KW / 50 A: PS21A79
5,5 kW / 75 A: PS21A7A
Large DIP (V4)
[Viso = 2500 V]
1200
DIP-PSC
built-in partial SW circuit
600

PS81B93-AE/ -EW
PS81B93-A/ -W
PS81B94-A/ -W
PS81B95-A/ -W

* V4-DIP-modules are available with the following options:

"-4" standard type, normal pins "-T" with over temperature sensor/protection
"-4A" longer pins "-S" open emitter type (on N-side)
"-4C" control-pins with zigzag arrangement "-E" 8-Ampere type
(only with PS219x3 types)
"-4W" pins on both sides with zigzag arrangement "-V" fast SW-off type

** modules PS21993-x, PS21994-x und PS21997-x with lower loss full-gate CSTBT-chips.

 

 

 

DIP-IPM   -  5th generation

Mitsubishi implemented in their 5th generation of dual inline package intelligent power modules consequently the new CSTBT chips into the market proven "Super Mini DIP" housing.
The 5th generation DIP-IPMs focus on small power drives like in air conditioners, washing machines and other white goods.

 

Features:
3-phase DC/AC conversion
Junction temp. range Tj: -20C up to 150C
Protection functions: Short Circuit (SC), Under Voltage (UV), Over Temperature (OT)
Analogue output of LVIC temp. or integrated over temp. protection
Fault signal output in case of a failure
3-15V input compatible high active logic
available as short-, long- or zigzag pin type
pin compatible with V4  PS219xx series (38mm x 24mm)
N-side open emitter
Isolation voltage: 1500Vrms

 
Vces
(V)
200 W
(5 A)
400 W
(10 A)
750 W
(15 A)
Mini DIPIPM (V5)
analogue temperature output
600
Mini DIPIPM (V5) T-series
integrated overtemperature protection
600


 

 

 

FM-Module: Hochleistungs-MOSFETs

  ID(A)
VDSS (V)
100 A (200 A)
200 A (400 A)
300 A (600 A)
75
100
150

 

 

QM-modules:
Darlington transistor module  (out of production)

Circuit

VCBO
(V)
Ic (A)
Type Diagram
15
20
30
50
75
100
150
200
300
400
500
600
H
600
note1
QM400HA-H
note1
QM500HA-H
High-hFE
note1
1000
QM30HY-2H
QM150HY-2H
note1
1200
QM200HA-24
QM300HA-24
QM600HA-24
1400
QM30HC-2H
(non isolated)
D

600
QM15DX-H
QM20DX-H
note1
1000
QM15DX-2H
   
note1
1200
QM15DX-24
QM30DY-24
QM50DY-24
QM150DY-24
   
E2
600
QM30E2Y-H
   
note1
1000
QM30E2Y-2H
QM50E2Y-2H
QM75E2Y-2H
   
E3
600
QM30E3Y-H
QM50E3Y-H
QM75E3Y-H
   
note1
1000
QM30E3Y-2H
QM50E3Y-2H
QM75E3Y-2H
QM100E3Y-2H
   
C
600
QM30CY-H
QM50CY-H
QM75CY-H
QM100CY-H
QM150CY-H
   
T
600
QM100TX1-H
   
note1
1000
QM15TB-2H
QM30TB-2H
QM50TB-2H
   
note1
1200
QM15TB-24
QM30TB-24
QM50TB-24
   
note1: triple darlington type

 

general info: a "k" at the end of type number has no influence on electrical or mechanical matters

 

High Beta Transistor Modules

Circuit
VCBO
(V)
Ic (A)
Type
Diagram
10
30
50
300
400
600
800
1000
H H configuration: single type
600
QM10HA-HB note2
QM30HA-HB
note2
QM50HA-HB
note2
QM300HA-HB
note2
QM400HA-HB
note2
QM500HA-H
note3
1000
QM300HA-2HB QM400HA-2HB QM600HA-2HB QM800HA-2HB QM1000HA-2HB
note3
1200
QM300HA-24B QM400HA-24B QM600HA-24B QM800HA-24B QM1000HA-24B
 
15
20
30
50
75
100
150
200
300
D D configuration Dual type
note2
600
QM30DY-HB QM50DY-HB QM75DY-HB QM100DY-HB QM150DY-HBK QM200DY-HB QM300DY-HB
note3
1000
QM50DY-2HB QM75DY-2HB QM100DY-2HB QM150DY-2HBK QM200DY-2HB QM300DY-2HB
note3
1200
QM50DY-24B QM75DY-24B QM100DY-24B QM150DY-24BK QM200DY-24B QM300DY-24B
T T configuration 6-pack type
500
QM15TG-9B QM20TG-9B
600
QM15TD-HB QM20TD-HB note2
QM30TF-HB
note2
QM50TF-HB
note2
QM75TF-HB
note2
QM100TF-HB
note4
QM15KD-HB
note4
QM20KD-HB
note2
QM30TX-HB
note2
QM50TX-HB
note2
QM75TX-HB
note2
QM100TX1-HB
1000
note2
QM15TB-2HB
note3
QM30TB-2HB
note3
QM50TB-2HB
1200
note2
QM15TB-24B
note3
QM30TB-24B
note3
QM50TB-24B

note1: Ic=500A
note3: fourfold stacked darlington type

 

note2: triple stacked darlington type
note4
: 3-phase built-in converter

general info: a "K" at the end of type number has no influence on electrical or mechanical matters

 

RM-modules: diode module


Standard Diodes

Circuit VRRM
(V)
I Fav (A)
Type Diagram 20 30 40 50 60 100 150 250 500
H
400
RM500HA-M
800
RM500HA-H
1200
RM500HA-24
1600
RM500HA-2H
D
400
RM30DZ-M
RM60DZ-M
RM100DZ-M
RM150DZ-M
RM250DZ-M
RM500DZ-M
800
RM30DZ-H
RM60DZ-H
RM100DZ-H
RM150DZ-H
RM250DZ-H
RM500DZ-H
1200
RM30DZ-24
RM60DZ-24
RM100DZ-24
RM150DZ-24
RM250DZ-24
RM500DZ-24
1600
RM30DZ-2H
RM60DZ-2H
RM100DZ-2H
RM150DZ-2H
RM250DZ-2H
RM500DZ-2H
C
400
RM30CZ-M
RM60CZ-M
RM100CZ-M
RM150CZ-M
RM250CZ-M
800
RM30CZ-H
RM60CZ-H
RM100CZ-H
RM150CZ-H
RM250CZ-H
1200
RM30CZ-24
RM60CZ-24
RM100CZ-24
RM150CZ-24
RM250CZ-24
1600
RM30CZ-2H
RM60CZ-2H
RM100CZ-2H
RM150CZ-2H
RM250CZ-2H
U
400
RM150UZ-M
RM250UZ-M
RM500UZ-M
800
RM150UZ-H
RM250UZ-H
RM500UZ-H
1200
RM150UZ-24
RM250UZ-24
RM500UZ-24
1600
RM150UZ-2H
RM250UZ-2H
RM500UZ-2H
D2
2000
RM50D2Z-40
RM100D2Z-40
T
400
RM10TA-M
RM15TA-M
RM20TPM-M
RM30TA-M
RM30TB-M
RM30TPM-M
RM50TC-M
RM75TC-M
RM75TPM-M
800
RM10TA-H
RM15TA-H
RM20TPM-H
RM30TA-H
RM30TB-H
RM30TPM-H
RM50TC-H
RM75TC-H
RM75TPM-H
1200
RM10TA-24
RM15TA-24
RM20TA-24
RM20TPM-24
RM30TC-24
RM50TC-24
RM75TC-24
RM75TPM-24
1600
RM10TA-2H
RM15TA-2H
RM20TA-2H
RM20TPM-2H
RM30TC-2H
RM50TC-2H
RM75TC-2H
RM75TPM-2H
2000
RM15TC-40
RM30TC-40


High speed diodes

 - F-series for bipolar speed switching
 - S-series for IGBT speed switching

Connection VRRM
(V)
Idc (A)
Type No. Diagram 20/25 50 100 200 250 300 400/450
H 250/500
RM250HA-10F
RM450HA-5H
600
RM20HA-12F
RM50HA-12F
note1
RM50HG-12S
RM100HA-12F
1000
RM20HA-20F
RM50HA-20F
RM100HA-20F
RM200HA-20F
RM400HA-20S
1200
RM20HA-24F
note1
RM25HG-24S
RM50HA-24F
RM100HA-24F
RM200HA-24F
RM300HA-24F
RM400HA-24S
C 300 RM20CA-6S RM50CA-6S
RM300CA-9W
for welding
600
RM20CA-12F
RM20CA-12S
RM50CA-12F
RM50CA-12S
RM100CA-12F
1000 RM20CA-20F RM50CA-20F
RM50CA-20S
RM100CA-20F
1200 RM20CA-24F RM50CA-24F RM100CA-24F
C1 300
RM20C1A-6S
RM50C1A-6S
600
RM20C1A-12F
RM20C1A-12S
RM50C1A-12F
RM50C1A-12S
RM100C1A-12F
1000
RM20C1A-20F
RM50C1A-20F
RM50C1A-20S
RM100C1A-20F
1200
RM20C1A-24F
RM50C1A-24F
RM100C1A-24F
D 600
RM20DA-12F
RM20DA-12S
RM50DA-12F
RM50DA-12S
1000
RM20DA-20F
RM200DA-20F
1200 RM20DA-24F RM200DA-24F
S / R
300
RM60SZ-6S
RM60SZ-6R

for welding
RM100SZ-6S
RM100SZ-6R

for welding


"F" in the end of type No.: high-speed diode modules for mapping transistor modules
"H", "S" types: ultra high-speed diode modules for mapping MOSFET, and IGBT-modules

note1:Snubber use, for IGBT module & IPM



High voltage diodes

H
2500
   
RM1200HA-50S
3300     RM1200HA-66S    
D
3300

 

TM-modules: thyristors

data sheets on request.

Circuit VRRM
(V)
ITav (A)
Type Diagram 20 25 55 90 130 150 200 400
H 400 TM400HA-M
800 TM400HA-H
1200 TM400HA-24
1600 TM400HA-2H
D 400 TM20DA-M TM25DZ-M TM55DZ-M TM90DZ-M TM130DZ-M TM200DZ-M TM400DZ-M
800 TM20DA-H TM25DZ-H TM55DZ-H TM90DZ-H TM130DZ-H TM200DZ-H TM400DZ-H
1200 TM25DZ-24 TM55DZ-24 TM90DZ-24 TM130DZ-24 TM200DZ-24 TM400DZ-24
1600 TM25DZ-2H TM55DZ-2H TM90DZ-2H TM130DZ-2H TM200DZ-2H TM400DZ-2H
C 400 TM25CZ-M TM55CZ-M TM90CZ-M TM130CZ-M TM200CZ-M TM400CZ-M
800 TM25CZ-H TM55CZ-H TM90CZ-H TM130CZ-H TM200CZ-H TM400CZ-H
1200 TM25CZ-24 TM55CZ-24 TM90CZ-24 TM130CZ-24 TM200CZ-24 TM400CZ-24
1600 TM25CZ-2H TM55CZ-2H TM90CZ-2H TM130CZ-2H TM200CZ-2H TM400CZ-2H
P 400 TM130PZ-M TM200PZ-M TM400PZ-M
800 TM130PZ-H TM200PZ-H TM400PZ-H
1200 TM130PZ-24 TM200PZ-24 TM400PZ-24
1600 TM130PZ-2H TM200PZ-2H TM400PZ-2H
U 400 TM400UZ-M
800 TM400UZ-H
1200 TM400UZ-24
1600 TM400UZ-2H
R 400 TM20RA-M TM25RZ-M TM55RZ-M TM90RZ-M TM130RZ-M TM200RZ-M
800 TM20RA-H TM25RZ-H TM55RZ-H TM90RZ-H TM130RZ-H TM200RZ-H
1200 TM25RZ-24 TM55RZ-24 TM90RZ-24 TM130RZ-24 TM200RZ-24
1600 TM25RZ-2H TM55RZ-2H TM90-RZ-2H TM130RZ-2H TM200RZ-2H
E 400 TM25EZ-M TM55EZ-M TM90EZ-M TM130EZ-M TM200EZ-M
800 TM25EZ-H TM55EZ-H TM90EZ-H TM130EZ-H TM200EZ-H
1200 TM25EZ-24 TM55EZ-24 TM90EZ-24 TM130EZ-24 TM200EZ-24
1600 TM25EZ-2H TM55EZ-2H TM90EZ-2H TM130EZ-2H TM200EZ-2H
G 400 TM130GZ-M TM200GZ-M
800 TM130GZ-H TM200GZ-H
1200 TM130GZ-24 TM200GZ-24
1600 TM130GZ-2H TM200GZ-2H
T3 400

note1
TM10T3B-M

note1
note3
TM15T3A-M

note1
note4
TM25T3A-M

800 note1
TM10T3B-H
note1
note3
TM15T3A-H
note1
note4
TM25T3A-H
S 300 note1
note4
TM60SA-6
note2
TM90SA-6
note2
TM150SA-6
400 note1
note4
TM60SZ-M
note2
note5
TM100SZ-M
note1: Direct current output
note3: ITSM=300
note5: FIT=100A
note2: Non-insulated type
note4: IT=60A

 

Discrete high power products

 Diodes (FD-series) - general use

 
Vrrm
I F (AV)
500
600
800
1200
1600
2000
2800
3000
4000
4400
200
SR202AM-40S(R)
240
FD252AM-40
250
SR252AM-40S(R)
300
SR302AL-24S(R)
380
FD402AL-16
400
FD402AM-32 SR402AH-60
600
FD602AH-60 FD602AV-88
800
FD1000A-56 FD1000D-56
1600
FD1600CP-10 FD1600A-60 FD1600CV-80
3500
FD3500BP-12 FD3500AH-56
5000
FD5000AV-100DA


 Diodes
(FD-series) - fast switching

I F(AV) V RRM
2500 2800 4500 6000
150
SR202AH-50S(R)
SR202AV-90

230

FD252AV-90
440
FD452AH-50
FD500JV-90DA
610
FD602BV-90
800
FD1000FV-90
FD1000FX-90
1000
FD1000FH-56
1500
FD1500CV-90DA
FD1500AV-90
FD1500AU-120DA
2000+
FD2000DU-120
FD3000AU-120DA


 Thyristors (FT-series)- general use

I T(AV) V DRM(V)
400 600 1200 1400 1600 1800 2200 2500 2700 2800 4000 4500 12000
175
CR202AM-36
250
CR252AP-12
CR252AM-36
300
FT302AM-36
320
FT502AH-80
400
FT402AL-32
FT402AM-36
FT402AM-36
500
FT502AL-32
FT502BH-44
800
FT802AL-24
FT802AV-90
1000
FT1000A-50
FT1000BV-80
1500
FT1500DL-28
FT1500CH-54
FT1500DV-80
FT1500DV-80
FT1500AU-240
2500
FT2500CL-24
FT2500BH-56
5000
FT5000AP-8


 Thyristors
(FT-series)- fast switching

I T(AV) V DRM(V)
1200 1800 2500
150
CR152AY-24
800
FT1000CY-24
FT1000CX-36
1000
FT1000AX-50
1500
FT1500EX-24
FT1500EY-24

 

Drivers (Outsourced to Isahaya - please look here)

 drivers for transistor modules:M57903L  M57915L  M57916L  M57917L    M57925L  M57950L  M57951L

 drivers for IGBT modules:         M57957L  M57958L  M57959L  M57959AL M57962L  M57175L-01  trench: M57161L-01

other: high beta transistor driver M57955L
  DC-DC-converter M57120L        M57115L-01  M57184N-715
  power supply M57120L-01  M57121L        M57140-01      M57142-01    M57993L    M57994L
  MOSFET driver M57918L        M57919L        M57924L         M57956L
  high voltage IC M63991FP     M63992FP     M63993FP      M63994FP
  

Ineltron is contract distributor of Mitsubishi (power semiconductors), Powerex, Powersem, InPower, eldre
a
nd Isahaya Electronics.. We are also selling heat sinks and assembly components of Arcel (France).

INELTRON GmbH, Hugenottenstr. 30, 61381 Friedrichsdorf, Germany
FAX:   + 49 6172 75933      phone:  + 49 6172 59 88 09     E-Mail:  info@ineltron.de

 

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